Registre simple
dc.contributor |
Universitat de Vic. Escola Politècnica Superior |
|
dc.contributor.author |
Kail, F. |
|
dc.contributor.author |
Molera Marimon, Judit |
|
dc.contributor.author |
Farjas, J. |
|
dc.contributor.author |
Roura Poch, Pere |
|
dc.contributor.author |
Secouard, C. |
|
dc.contributor.author |
Roca i Cabarrocas, Pere |
|
dc.date.accessioned |
2014-02-11T09:47:03Z |
|
dc.date.available |
2014-02-11T09:47:03Z |
|
dc.date.created |
2012 |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
Kail, F., Molera Marimon, J., Farjas, J., Roura, P., Secouard, C., & Roca i Cabarrocas, P. (2012). Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon. Journal of Physics-Condensed Matter, 24(9), 095401. |
ca_ES |
dc.identifier.issn |
0953-8984 |
|
dc.identifier.uri |
http://hdl.handle.net/10854/2696 |
|
dc.description.abstract |
The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials
varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5
361). According to the classical theory of nucleation, this variation should produce large
differences in the crystallization kinetics leading to crystallization temperatures and activation
energies exceeding 550 C and 1.7 eV, respectively, the ‘standard’ values measured for a-Si
obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar
for all the samples studied and has no correlation with the crystallization enthalpy. This
discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains
that are almost identical in all samples, independently of their crystallization enthalpy.
Probably the existence of microscopic inhomogeneities also plays a crucial role in the
crystallization kinetics of other amorphous materials and glasses. |
ca_ES |
dc.format |
application/pdf |
|
dc.format.extent |
8 p. |
ca_ES |
dc.language.iso |
eng |
ca_ES |
dc.publisher |
IOP Publishing |
ca_ES |
dc.rights |
(c) IOP Publishing, 2012 |
|
dc.rights |
Tots els drets reservats |
ca_ES |
dc.subject.other |
Cristal·lització |
ca_ES |
dc.title |
Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon |
ca_ES |
dc.type |
info:eu-repo/semantics/article |
ca_ES |
dc.identifier.doi |
https://doi.org/doi:10.1088/0953-8984/24/9/095401 |
|
dc.rights.accessRights |
info:eu-repo/semantics/closedAccess |
ca_ES |
dc.type.version |
info:eu-repo/publishedVersion |
ca_ES |
dc.indexacio |
Indexat a SCOPUS |
|
dc.indexacio |
Indexat a WOS/JCR |
ca_ES |
Text complet d'aquest document
Registre simple